MF072300 - SEMI MF723 - Practice for Conversion Between Resistivity and Dopant or Carrier Density for Boron-Doped, Phosphorous-Doped, and Arsenic-Doped Silicon Revision:SEMI MF723-1105 - Superseded The Test Method is focused

The Test Method is focused only and specifically on near edge geometry applications

本試験方法の目的は，1台のMFCがガスを他のガスに変更したとき，公称平均換算率およびそのMFCの流量関数としての換算率を定量化することである。

SEMI C90-00-0725 (complete rewrite)

The substrate on which the thin film is fabricated shall have a minimum edge to edge dimension of 25 mm

as well as delay in delivery and testing

MF072300 - SEMI MF723 - Practice for Conversion Between Resistivity and Dopant or Carrier Density for Boron-Doped, Phosphorous-Doped, and Arsenic-Doped Silicon Revision:SEMI MF723-1105 - Superseded The Test Method is focusedDopant density and resistivity of silicon are two important acceptance parameters used in the interchange of material by consumers and producers in the semiconductor industry. Therefore, a particular method of converting from dopant density to resistivity and vice versa must be available since some test methods measure resistivity while others measure dopant density. In addition, there are occasions when conversion from resistivity to carrier density